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| Fuji Discrete Package IGBT n Features * Square RBSOA * Low Saturation Voltage * Less Total Power Dissipation * Minimized Internal Stray Inductance n Outline Drawing n Applications * High Power Switching * A.C. Motor Controls * D.C. Motor Controls * Uninterruptible Power Supply n Maximum Ratings and Characteristics * Absolute Maximum Ratings Items Collector-Emitter Voltage Gate -Emitter Voltage ( Tc=25C) Symbols VCES VGES DC Tc= 25C IC 25 Collector Current DC Tc=100C IC 100 1ms Tc= 25C IC PULSE IGBT Max. Power Dissipation PC FWD Max. Power Dissipation PC Operating Temperature Tj Storage Temperature Tstg n Equivalent Circuit Ratings 600 20 20 10 80 75 35 +150 -40 +125 Units V V A W W C C * Electrical Characteristics Items Zero Gate Voltage Collector Current Gate-Emitter Leackage Current Gate-Emitter Threshold Voltage Collector-Emitter Saturation Voltage Input capacitance Output capacitance Reverse Transfer capacitance ( at Tj=25C ) Symbols ICES IGES VGE(th) VCE(sat) Cies Coes Cres tON tr tOFF tf tON tr tOFF tf VF trr Test Conditions VGE=0V VCE=600V VCE=0V VGE= 20V VGE=20V IC=10mA VGE=15V IC=10A VGE=0V VCE=10V f=1MHz VCC=300V IC=10A VGE=15V RG=220 VCC=300V IC=10A VGE=+15V RG=22 IF=10A VGE=0V IF=10A, VGE=-10V, di/dt=100A/s Min. Typ. Max. 1.0 20 8.5 3.0 Units mA A V pF 1.2 0.6 1.0 0.35 0.16 0.11 0.30 0.35 3.0 300 5.5 700 150 20 Turn-on Time Switching Time Turn-off Time Turn-on Time Turn-off Time Diode Forward On-Voltage Reverse Recovery Time s s V ns * Thermal Characteristics Items Thermal Resistance Symbols Rth(j-c) Rth(j-c) Test Conditions IGBT Diode Min. Typ. Max. 1.66 3.57 Units C/W Collector Current vs. Collector-Emitter Voltage 25 T j= 2 5 C 25 Collector Current vs. Collector-Emitter Voltage T j= 1 2 5 C V GE = 2 0 V , 1 5 V , 1 2 V 20 20 V GE = 2 0 V , 1 5 V 12V [A] C Collector Current : I Collector Current : I 15 C [A] 15 10V 10 10 10V 5 5 8V 0 0 1 2 3 4 5 6 Collector-Emitter Voltage : V CE [V] 0 0 1 2 3 4 5 8V 6 Collector-Emitter Voltage : V CE [V] Collector-Emitter Voltage vs. Gate-Emitter Voltage 12 T j= 2 5 C 12 Collector-Emitter Voltage vs. Gate-Emitter Voltage T j= 1 2 5 C [V] 10 [V] CE 10 CE Collector-Emitter Voltage : V 6 Collector-Emitter Voltage : V 8 8 6 4 IC = 20A 10A 5A 4 I C= 20A 10A 5A 2 2 0 0 5 10 15 20 25 0 0 5 10 15 20 25 Gate-Emitter Voltage : V GE [V] Gate-Emitter Voltage : V GE [V] Switching Time vs. Collector Current V CC = 3 0 0 V , R G= 2 2 , V GE = 1 5 V , T j= 2 5 C 1000 1000 Switching Time vs. Collector Current V CC = 3 0 0 V , R G = 2 2 , V GE = 1 5 V , T j= 1 2 5 C t off , t r, t off , t f [nsec] , t r, t off , t f [nsec] t off tf t on tf t on 100 on Switching Time : t Switching Time : t on 100 tr tr 10 0 5 10 15 20 10 0 5 10 15 20 Collector Current : I C [A] Collector Current : I C [A] Switching Time vs. R G V CC =300V, I C = 1 0 A , V GE = 1 5 V , T j= 2 5 C Switching Time vs. R G V CC =300V, I C = 1 0 A , V GE = 1 5 V , T j= 1 2 5 C , t r, t off , t f [nsec] 1000 , t r, t off , t f [nsec] t on t off tr tf 1000 t off t on tf tr on Switching Time : t 100 Switching Time : t on 100 10 0 100 Gate Resistance : R G [ ] 200 10 0 100 Gate Resistance : R G [ ] 200 Capacitance vs. Collector-Emitter Voltage T j= 2 5 C 500 Dynamic Input Characteristics T j= 2 5 C 25 [V] , C res , C ies [pF] C ies CE 1000 Collector-Emitter Voltage : V 300 15 100 C oes 200 10 100 5 10 C res 0 5 10 15 20 25 30 35 0 0 10 20 30 Gate Charge : QG 40 [nQ] 50 0 60 Collector-Emitter Voltage : V CE [V] Reverse Recovery Time vs. Forward Current V R= 2 0 0 V , -di Reverse Recovery Current vs. Forward Current V R= 2 0 0 V , -di 150 / dt= 1 0 0 A / s e c 5 / dt = 1 0 0 A / s e c 125C [nsec] [A] 4 125C 100 rr Reverse Recovery Time : t Reverse Recovery Current : I rr 3 25C 50 25C 2 1 0 0 5 10 15 20 0 0 5 10 15 20 Forward Current : I F [A] Forward Current : I F [A] Gate-Emitter Voltage : V Capacitance : C oes GE [V] 400 V C C =200V, 300V, 400V 20 Reverse Biased Safe Operating Area + V GE = 1 5 V , - V GE <1 5 V , T j<1 2 5 C , R G >22 25 150 Typical Short Circuit Capability V CC = 4 0 0 V , R G = 22 , T j= 1 2 5 C 60 t SC I SC 20 [A] [A] SC Short Circuit Current : I 15 Collector Current : I 10 50 20 5 0 0 100 200 300 400 500 600 700 0 5 10 15 20 [V] Gate Voltage : V GE 0 25 Collector-Emitter Voltage : V CE [V] Reverse Recovery Characteristics vs. Forward Voltage vs. Forward Current 25 T j= 1 2 5 C 2 5 C 20 250 I F = 1 0 A , T j= 1 2 5 C -di / dt 10 I rr [nsec] [A] rr 15 Forward Current : I 150 6 10 100 4 5 50 t rr 0 2 0 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 0 100 200 -di 300 / dt 400 500 0 600 Forward Voltage : V F [V] [A/sec] Transient Thermal Resistance Thermal Resistance : Rth(j-c) [C/W] 10 1 FWD 10 0 IGBT 10 -1 10 -2 10 -4 10 -3 10 -2 10 -1 10 0 P u l s e W i d t h : P W [sec] P.O. Box 702708-Dallas, TX 75370Dallas, TX - (972) 733-1700 - (972) 381-9991 (fax) 233-0481 www.collmer.com P.O. Box 702708 - Phone (972) 233-1589 Fax Reverse Recovery Current : I Reverse Recovery Time : t F rr [A] 200 8 Short Circuit Time : t SC 100 40 C [s] |
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